Dr. Ilia Valov
Principle Investigator
Physical Chemistry
Research Centre Juelich and RWTH-Aachen University, Germany
Nanoscale Processes and Filament Kinetics in Redox-Based Resistive Switching Memories
Abstract
Redox-based resistive switching memories (ReRAM) developed rapidly in the last decade as most promising candidates for nanolelectronic industry for new type non-volatile memory devices fulfilling the demands for green IT i.e. low power consumption, high operation speed and integration density, scalability and reliability. Recent achievements have clearly demonstrated the diversity of applications these devices can be used – for neuromorphic applications, alternative computing and logic operations, selector elements. All these developments are supported by system functionalities having their origin in the electrochemical nature of the ReRAM cells.
In this talk the newest achievements in the microscopic understandings of the processes responsible for the ReRAM functionalities will be presented. It will be shown that different ions (both cations and anions) are mobile and can undergo electrochemical transformation and thus, contribute to the resistive switching. The effects of moisture will be presented and their importance for both ECM and VCM ReRAMs will be discussed. The influence of different electrode materials in terms of electrocatalytic activity and passivation behavior will be highlighted. Finally it will be shown how the nanobattery effect relates to neuromorphic applications.