Dr. Joshua Yang
Department of Electrical and Computer Engineering
University of Massachusetts, Amherst
Memristive Devices for Computing
Abstract
Existing technologies for the current computing system are approaching their physical limits, and novel device concepts are required as device sizes continuously decrease. Under these new concepts, the devices need to be not only increasingly infinitesimal and simple but also increasingly capable. Memristive devices (RRAM) seem to fulfill these goals well for the next generation computing system. These devices are electrical resistance switches that can retain a state of internal resistance based on the history of applied voltage or current. Memristive devices can store and process information, and offer several key performance characteristics that exceed conventional integrated circuit technology. An important class of these devices is two-terminal resistance switches based on ionic motion, which are built from a simple conductor/insulator/conductor thin-film stack. Memristive devices with different properties can be used for different applications, including non-volatile memory, artificial synapses and artificial neurons. Device working mechanisms will be discussed followed by demonstrations of analog and neuromorphic computing using those devices.