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Jeehwan Kim

Contact Info

room 38-276

Massachusetts Institute of Technology

77 Massachusetts Avenue

Cambridge, Massachusetts 02139

Education

  • MSE

    UNIVERSITY OF CALIFORNIA-LOS ANGELES

    Ph.D.
  • MSE

    SEOUL NATIONAL UNIVERSITY

    M.S.
  • MSE

    Hongik University

    B.S.

Research Interests

  • Neuromorphic computing

    ‐ 1R-based ANN arrays for online training/inference 

    - Artificial synapses based on single-crystalline ReRAM 

  • Remote epitaxy, Graphene-based layer transfer

    ‐ III-V/III-N MicroLEDs

    - Freestanding InGaAs-based IR Photodectors 

    - Freestanding Multifunctional complex oxides for magnetoelectric coupling 

    - SiC/IIII-N power electronics 

  • Renewable energy, Energy storage

    - Wafer recycling technique for GaAs solar cells based on remote epitaxy 

    - High efficiency III-V multi-junction solar cells based on remote epitaxy 

    - Single-crystalline all solid-state battery 

  • Heterointegration, Flexible electronics

    - Skin strain sensor arrays 

    - Flexible/transparent microLEDs

    - Self-powered IoT system

  • Two-dimensional materials

    - Monolayer-by-monolayer splitting of wafer‐scale 2D materials

    - Wafer-scale single-crystalline 2D materials

      - Wafer-scale 2D heterostructures

Honors + Awards

  • U.S. Department of Energy Solar Energy Technologies Office Fiscal Year 2018 Funding Program, 2018
  • IBM Faculty Award, 2016
  • Lam Research Foundation Award, 2015, 2016
  • Master Inventor of IBM Corporation, 2012
  • 25 Invention Achievement Awards, IBM 2008-2015
  • 15 High Value Patent Awards, IBM 2008-2015

Teaching

2.001 Mechanics and Materials

2.674 Micro/Nano Engineering Laboratory

2.671 Instrument and Measurement

Publications

  • Selected Publications
  • 1. Jaewoo Shim†, Sang-Hoon Bae†, Wei Kong†, Doyoon Lee†, Kuan Qiao et al., and Jeehwan Kim*, “Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials” Science (2018)
  • 2. Wei Kong†, Huashan Li†, Kuan Qiao†, Yunjo Kim, Kyusang Lee, Yifan Nie, Doyoon Lee, et al., Jeffrey C. Grossman*, and Jeehwan Kim*, "Polarity governs atomic interaction through two-dimensional materials", Nature Materials (2018)
  • 3. S. Choi, S. Tan, Z. Li, Y. Kim, C. Choi, P.-Y Chen, S. Yu, and Jeehwan Kim*, “SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations,” Nature Materials (2018) 
  • 4. Y. Kim, S. S. Cruz, K. Lee, B. O. Alawode, C. Choi, Y. Song, J. M. Johnson, C. Heidelberger, W. Kong, S. Choi, K. Qiao, E. A. Fitzgerald, J. Kong, A. M. Kolpak, J. Hwang, and Jeehwan Kim*, “Remote epitaxy through graphene: Role of underlying substrates on van der Waals epitaxy” Nature, Vol. 544, 340–343 (2017) featured as a cover
  • 5. S.‐H. Bae, X. Zhou, S. Kim, Y. S. Lee, S. Cruz, Y. Kim, J. B. Hannon, Y. Yang, D. K. Sadana, F.s M. Ross, H. Park, and Jeehwan Kim*, “Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer‐scale, single‐domain graphene,” Proceedings of the National Academy of Science, Vol. 114, 4082-4086 (2017)
  • 6. Jeehwan Kim*, Can Bayram*, Hongsik Park, Cheng-Wei Cheng, Christos Dimitrakopoulos, John Ott, Kathleen Reuter, Stephen Bedell, and Devendra Sadana,“Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene”,  Nature Communications, Vol. 5, 4836 (2014)
  • 7. Jeehwan Kim*, Hongsik Park*, James B. Hannon, Stephen W. Bedell, Keith Fogel,  Devendra K. Sadana, Christos Dimitrakopoulos*,“Layer-resolved graphene transfer via engineered strain layers”,  Science, Vol. 342, 833 (2013)

Patents

  • Selected US Patents
  • 1. Grant # US 9,153,729 Atomic layer deposition for photovoltaic devices
  • 2. Grant # US 9,123,842 Photoreceptor with improved blocking layer
  • 3. Grant # US 9,123,838 Transparent conductive electrode for three dimensional photovoltaic device
  • 4. Grant # US 9,105,854 Transferable transparent conductive oxide
  • 5. Grant # US 9,105,805 Enhancing efficiency in solar cells by adjusting deposition power
  • 6. Grant # US 9,099,664 Transferable transparent conductive oxide
  • 7. Grant # US 9,096,050 Wafer scale epitaxial graphene transfer
  • 8. Grant # US 9,093,290 Self-formation of high-density arrays of nanostructures
  • 9. Grant # US 9,070,617 Reduced S/D contact resistance of III-V mosfet using low temperature metal-induced crystallization of n+ Ge
  • 10. Grant # US 9,059,272 Self-aligned III-V MOSFET fabrication with in-situ III-V epitaxy and in-situ metal epitaxy and contact formation
  • 11. Grant # US 9,059,271 Self-aligned III-V MOSFET fabrication with in-situ III-V epitaxy and in-situ metal epitaxy and contact formation
  • 12. Grant # US 9,059,013 Self-formation of high-density arrays of nanostructures
  • 13. Grant # US 9,040,428 Formation of metal nanospheres and microspheres
  • 14. Grant # US 9,040,340 Temperature grading for band gap engineering of photovoltaic devices
  • 15. Grant # US 9,035,282 Formation of large scale single crystalline graphene
  • 16. Grant # US 8,933,456 Germanium-containing release layer for transfer of a silicon layer to a substrate 
  • 17. Grant # US 8,927,857 Silicon: hydrogen photovoltaic devices, such as solar cells, having reduced light induced degradation and method of making such devices  
  • 18. Grant # US 8,916,451 Thin film wafer transfer and structure for electronic devices 
  • 19. Grant # US 8,916,409 Photovoltaic device using nano-spheres for textured electrodes 
  • 20. Grant # US 8,901,695 High efficiency solar cells fabricated by inexpensive pecvd
  • 21. Grant # US 8,889,466 Protective insulating layer, chemical mechanical polishing for polycrystalline thin film solar cells
  • 22. Grant # US 8,889,456 Method of fabricating uniformly distributed self-assembled solder dot formation for high efficiency solar cells
  • 23. Grant # US 8,878,055 Efficient nanoscale solar cell and fabrication method
  • 24. Grant # US 8,866,003 Solar cell employing an enhanced free hole density p-doped material and methods for forming the same
  • 25. Grant # US 8,859,321 Mixed temperature deposition of thin film silicon tandem cells  
  • 26. Grant # US 8,846,440 Germanium photodetector  
  • 27. Grant # US 8,841,544 Uniformly distributed self-assembled solder dot formation for high efficiency solar cells  
  • 28. Grant # US 8,841,162 Germanium photodetector  
  • 29. Grant # US 8,828,504 Deposition of hydrogenated thin film  
  • 30. Grant # US 8,822,317 Self-aligned III-V MOSFET diffusion regions and silicide-like alloy contact
  • 31. Grant # US 8,735,210 High efficiency solar cells fabricated by inexpensive PECVD
  • 32. Grant # US 8,685,858 Formation of metal nanospheres and microspheres
  • 33. Grant # US 8,679,947 Self-formation of high-density defect-free and aligned nanostructures  
  • 34. Grant # US 8,653,360 Compositionally-graded band gap heterojunction solar cell 
  • 35. Grant # US 8,642,431 N-type carrier enhancement in semiconductors 
  • 36. Grant # US 8,628,999 Solar cell made in a single processing chamber 
  • 37. Grant # US 8,628,996 Uniformly distributed self-assembled cone-shaped pillars for high efficiency solar cells 
  • 38. Grant # US 8,624,361 Self-formation of high-density defect-free and aligned nanostructures 
  • 39. Grant # US 8,617,938 Device and method for boron diffusion in semiconductors 
  • 40. Grant # US 8,614,116 Germanium photodetector 
  • 41. Grant # US 8,536,043 Reduced S/D contact resistance of III-V MOSFET using low temperature metal-induced crystallization of n+ Ge 
  • 42. Grant # US 8,476,152 N-type carrier enhancement in semiconductors 
  • 43. Grant # US 8,354,694 CMOS transistors with stressed high mobility channels 
  • 44. Grant # US 8,343,863 N-type carrier enhancement in semiconductors 
  • 45. Grant # US 8,304,272 Germanium photodetector 
  • 46. Grant # US 8,298,923 Germanium-containing release layer for transfer of a silicon layer to a substrate 
  • 47. Grant # US 8,178,430 N-type carrier enhancement in semiconductors 
  • 48. Grant # US 8,039,371 Reduced defect semiconductor-on-insulator hetero-structures 
  • 49. Grant # US 7,935,612 Layer transfer using boron-doped SiGe layer 
  • 50. Grant # US 7,754,008 Method of forming dislocation-free strained thin films